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Patent PORTFOLIO

LDMOS with Hybrid Contact

U.S. 10,892,362

Granted:  January 12, 2021


Reference

Source and Drain Enabled Conduction Triggers and Immunity Tolerance for ICs

U.S. - allowed

Granted:  About to Issue



Power Transistor Device having a Schottky or Schottky-like Contact

Taiwan I725,184

Granted:  April 21, 2021



Schottky Source on Lateral & Vertical DMOS

U.S. 10,510,869

Granted:  December 17, 2019


Reference

Schottky Source LDMOS

U.S. 9,947,787

Granted:  April 17, 2018


Reference

Additional Patents Pending

Enhancing Power MOSFETS - Especially at 90/65/28nm

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