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Patent PORTFOLIO

LDMOS with Self-Aligned Body and Hybrid Source

U.S. 11,522,053

Granted:  December 6, 2022


Reference

Methods for LDMOS with Self-Aligned Body and Hybrid Source

U.S. - Pending

Awaiting Office Action


CMOS with Hybrid Contact

U.S. 11,646,371

Granted:  May 9, 2023


Reference

LDMOS with Hybrid Contact

U.S. 10,892,362

Granted:  January 12, 2021


Reference

Methods for LDMOS with Hybrid Contact

U.S. 11,322,611

Granted:  May 3, 2022


Reference

Source and Drain Enabled Conduction Triggers and Immunity Tolerance for ICs

U.S. 11,228,174

Granted:  January 18, 2022


Reference

Power Transistor Device having a Schottky or Schottky-like Contact

Taiwan I773,303

Granted:  August 1, 2022


Reference

Power Transistor Device having a Schottky or Schottky-like Contact

Taiwan I725,184

Granted:  April 21, 2021


Reference

Schottky Source on Lateral & Vertical DMOS

U.S. 10,510,869

Granted:  December 17, 2019


Reference

Schottky Source LDMOS

U.S. 9,947,787

Granted:  April 17, 2018


Reference

Additional Patents Pending

International

European Patent Office (EPO)

Taiwan Intellectual Property Office (TIPO)

China

Hong Kong

Enhancing Power MOSFETS - Especially at 90/65/28nm

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